Experimental and numerical investigation of Poole–Frenkel effect on dynamic R <sub>ON</sub> transients in C-doped p-GaN HEMTs
نویسندگان
چکیده
Abstract In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on dynamic R ON transients in C-doped p-GaN HEMTs. To aim, perform a characterization acquired during OFF-state stress (i.e. V GS,STR = 0 < T , DS,STR 25–125 V) and interpret results with aid numerical simulations. We find that at room temperature accelerate 1/2 which is signature PFE, as further confirmed by simultaneous decrease activation energy ( E A ) extracted from Arrhenius plot 50 30 °C–110 °C. Results obtained means calibrated simulations reproduce exponential dependence time constants τ consequent reduction only when including PFE-enhancement model hole emission dominant acceptor traps buffer related to C doping. This result consistent ‘hole-redistribution’ considers (rather than electron capture) mechanism underlying increase stress.
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2021
ISSN: ['0268-1242', '1361-6641']
DOI: https://doi.org/10.1088/1361-6641/ac4113